CMNTVS12V
Ultra-miniature
Quad 12V Transient Voltage Suppressor
November 11, 2009 - The Central Semiconductor CMNTVS12V is a Quad 12V Transient Voltage Suppressor packaged in the SOT-953 surface mount case. This new circuit protection device can handle up to 18W of peak power and an ESD voltage of 8kV. Designed to protect static sensitive data interfaces against ESD damage, the low profile CMNTVS12V is ideal for small portable hand held electronic devices such as cell phones, digital cameras, memory card ports, music players, or any device with an active data port.
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CMBT3904E (NPN) and CMBT3906E (PNP)
Low VCE(SAT) Transistors
in the SOT-923 package ideal
for today's smallest electronic products
August 11, 2009 - The Central Semiconductor CMBT3904E (NPN) and CMBT3906E (PNP) are small signal transistors in the space saving SOT-923 surface mount package. Both devices are 40V general purpose transistors with a maximum collector current of 200mA and outstanding low typical VCE(SAT) specifications of 0.057V @ 10mA and 0.1V @ 50mA.
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CTLSH1-40M563
Single 40V, 1A Low VF Schottky Rectifier in the TLM563
is a drop in replacement for a SOT-563.
July 28, 2009 - Designed to be a drop-in replacement for existing SOT-563 devices, the Central Semiconductor Corp. CTLSH1-40M563 is a single 1A, 40V Schottky rectifier packaged in the TLM563 surface mount case with outstanding low VF characteristics, improved power dissipation, and a lower profile than the SOT-563.
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CMLSH2-4LC
Dual Pair, Common Cathode
40V, 200mA Low VF Schottky Diodes
May 5, 2009 – Central Semiconductor Corp. announces the release of the CMLSH2-4LC dual pair, low VF Schottky diodes packaged in the space saving SOT-563 surface mount case. This device has two isolated pairs of 40V, 200mA Schottky diodes in a common cathode configuration making it the world’s smallest discrete dual diode pair device. The CMLSH2-4LC has a typical low VF of 0.24V and a typical switching speed of 3.5ns and is ideal for a wide range of portable battery powered circuit applications.
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CMRDM3590
20V, 160mA Dual MOSFETs
April 14, 2009 – Central Semiconductor Corp. announces the release of the CMRDM3590 dual,
N-Channel Enhancement-mode MOSFET packaged in the space saving SOT-963 surface mount case. This device has two individual isolated 20V, 160mA MOSFETs allowing for alternative design considerations and maximum efficiency of board space. The maximum rDS(ON) of the device is 3.0Ω at a test condition of ID=100mA and VGS=4.5V.
Circuit applications included: load power switches, power supply converters, and other power management applications
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CMLDM7003
50V, 280mA Dual MOSFETs
March 17, 2009 – Central Semiconductor Corp. announces the release of the CMLDM7003 dual, N-Channel Enhancement-mode MOSFET with built-in 2kV ESD protection. This device has two isolated 50V, 280mA MOSFETs with transient voltage suppressors across the source and gate of each device as an added protection against high voltage transient conditions. The rDS(ON) of the device is 3.0Ω at a test condition of ID=50mA and VGS=1.8V.
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CTLS5064-M532 and CTLS5064R-M532
Low Profile 400V, 0.8A SCR
February 24, 2009 – Central Semiconductor Corp. announces the release of the CTLS5064-M532 and CTLS5064R-M532 Low Profile SCR devices packaged in the TLM532 surface mount case. Both devices are single 400V, 0.8A SCRs designed for applications with extreme height limitation. The CTLS5064R-M532 device is a version with the pin configuration of the cathode and gate reversed to meet an alternative layout requirement. The key electrical characteristics of these devices include: 0.8V gate threshold voltage, 200µA gate threshold current, and an on-state switching speed of 2.8µs.
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CMLT3820G & CMLT7820G
Tiny Energy Efficient
Low VCE(SAT) Transistors ideal for portable electronics
February 11, 2009 – Central Semiconductor Corp. announces the release of the CMLT3820G (NPN) and CMLT7820G (PNP) Low VCE(SAT) Transistors packaged in the SOT-563 surface mount case with a maximum profile of 0.6mm. Both devices are 60 Volt, 1.0 Amp transistors with exceptionally low VCE(SAT) characteristics. The NPN CMLT3820G specifies a VCE(SAT) of 115mV @ 100mA, and 280mV @ 1.0A, while the complementary PNP CMLT7820G is listed as 175mV @ 100mA and 340mV @1.0A.
In addition to superior electrical specifications, the CMLT3820G and CMLT7820G are packaged in the SOT-563 case with a maximum height of 0.60mm. These devices are ideal for portable battery powered applications requiring an energy efficient device with a low profile. Other applications include DC/DC conversion, voltage clamping, and protection circuits.
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CMPSH1-4L & CMPSH1-4LE
Low VF Schottky Rectifiers in the SOT-23F package.
January 21, 2009- Central Semiconductor Corp. announces the release of the CMPSH1-4L and CMPSH1-4LE Low VF Schottky rectifiers with superior low VF characteristics and packaged in the SOT-23F surface mount case. The CMPSH1-4L features a low forward voltage drop of 270mV @ 100mA, and 390mV @ 1.0A, while the enhanced version CMLPSH1-4LE, features low leakage currents of 200µA @ 5.0 Volts and 900µA @ 40 Volts.
In addition to superior electrical specifications, the CMPSH1-4L and CMPSH-4LE are packaged in the SOT-23F providing a 9% lower profile than the standard SOT-23 with a maximum height of 1.0mm. These energy efficient devices are ideal for portable battery powered applications where extending the battery charge duration is a prime requirement. These devices were developed in response to customers’ inquiries requesting alternative electrical characteristics to meet specific design requirements.
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