CMPDM303NH

High current, energy efficient
N-Channel MOSFET
in the SOT-23F

CMPDM303NHSchematic

Description
The Central Semiconductor CMPDM303NH is an N-Channel Enhancement-mode MOSFET that optimizes high current capability and energy efficiency in the industry standard SOT-23F package. The combination of high current capability, low gate charge and low on-resistance makes this device the ideal selection for energy sensitive applications that require higher drain currents.

Pricing for the CMPDM303NH starts at US$ 0.20 each for 3,000 pieces on 7” tape and reel. Sample devices are available upon request.

Request samples of the CMPDM303NH today. Eng_Samples_box

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Features
• Low rDS(ON) = 27mΩ (typ.) @ VGS = 4.5V
• High current ID=3.6A
• Low gate charge Qgs = 0.9nC (typ.)

Applications
Ideal for a broad range of applications:
Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
• Motor control

Benefits
Energy efficient
• 9% lower profile than the SOT-23 package

• Fast switching speed ton=8.7ns (typ.)

RoHSHalogen Free by design


  Datasheet for the CMPDM303NH: Package Detail with Material Composition Data
for the SOT-23F package:
  View_Datasheet View_package
     
  Product Details: Product Brief:
  View_Details View_Product_brief
     

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For more information on this product,
contact Central Semiconductor Corp. at
631-435-1110
or
contact your local sales representative
     

Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
TEL (631) 435-1110
FAX (631) 435-1824