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Power Transistors
Darlington
 
Devices are listed in order of descending hFE
Type No.
  
Case
IC
PD
BVCBO
BVCEO
hFE
@IC
VCE(SAT)
@IC
fT
Chip Process
 
  
 
 
 
*BVCES
 
 
 
 
 
 
 
Electrical
 
 
 
(A)
(W)
(V)
(V)
 
 
(A)
(V)
(A)
(MHz)
Characteristic
 
 
 
MAX
 
MIN
MIN
MIN
MAX
 
MAX
 
MIN
Curves
NPN
2.0
20
100
100
1,000
12,000
2.0
2.0
2.0
25
PNP
2.0
20
100
100
1,000
12,000
2.0
2.0
2.0
25
NPN
8.0
20
100
100
1,000
12,000
4.0
4.0
8.0
4.0
PNP
8.0
20
100
100
1,000
12,000
4.0
4.0
8.0
4.0
NPN
5.0
2.0
100
100
1,000
-
3.0
4.0
5.0
4.0
PNP
5.0
2.0
100
100
1,000
-
3.0
4.0
5.0
4.0
NPN
0.6
2.0
200*
-
3,000
-
0.16
1.2
0.16
-

Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
TEL (631) 435-1110
FAX (631) 435-1824