PCN #
|
Extent of change
|
| 101 |
Dimension change to all Bridge Rectifiers in SMDIP package |
| 102 |
Dimension change to all Bridge Rectifiers in DIP package |
| 103 |
TO-92 -18R lead formed package |
| 104 |
SOD-80 cylindrical case replaced by flat SOD-123 case. |
| 105 |
Small signal wafer thickness reduced from
9.0 mils to 7.1 mils. |
| 106 |
5.0W Zener diodes packaged in the AX-5W case
replaced by devices packaged in the DO-201 case. |
| 107 |
An overall reduction of the die area.
The CP192V chip process currently measures 13 x 17 mils and is being replaced by the CP392V chip process which measures 11 x 11 mils.
The CP592V chip process currently measures 12 x 20 mils and is being replaced by the CP792V chip process which measures 11 x 11 mils. |
| 108 |
An overall reduction of the die area.
The CPZ19 chip process currently measures 17.7 x 17.7 mils and is being replaced by the CPZ28 chip process which measures 13 x 13 mils. |
| 109 |
An overall reduction of the die area.
The CPD41 chip process currently measures 20 x 20 mils and is being replaced by the CPD93V chip
process which measures 12.8 x 12.8 mils. |
| 110 |
Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form.
The overall wafer diameter is being increased from 4 inch to 5 inch.
The overall die thickness is being reduced from 8 mils to 5.9 mils. |
| 113 |
All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages.
Copper wire has been added as a qualified material for wire bonding in addition to the currently used gold wire. |
| 116 |
Schottky diodes manufactured in the SOD-123, SOT-23, and SOT-323 packages and Transient Voltage Suppressors manufactured in the SOT-23 package.
Tin (Sn) wafer backside metal has been added as a qualified material in addition to the currently used gold (Au) backside metal. |
